IRF9630STR

IRF9630STRLPBF vs IRF9630STRLPBF-CUT TAPE vs IRF9630STRL

 
PartNumberIRF9630STRLPBFIRF9630STRLPBF-CUT TAPEIRF9630STRL
DescriptionMOSFET P-CH -200V HEXFET MOSFETMOSFET P-CH 200V 6.5A D2PAK
ManufacturerVishay-IR/VISHAY
Product CategoryMOSFET-FETs - Single
RoHSE--
TechnologySi-Si
PackagingReel-Digi-ReelR Alternate Packaging
SeriesIRF--
BrandVishay / Siliconix--
Product TypeMOSFET--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Unit Weight0.050717 oz-0.050717 oz
Mounting Style--SMD/SMT
Package Case--TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Number of Channels--1 Channel
Supplier Device Package--D2PAK
Configuration--Single
FET Type--MOSFET P-Channel, Metal Oxide
Power Max--3W
Transistor Type--1 P-Channel
Drain to Source Voltage Vdss--200V
Input Capacitance Ciss Vds--700pF @ 25V
FET Feature--Standard
Current Continuous Drain Id 25°C--6.5A (Tc)
Rds On Max Id Vgs--800 mOhm @ 3.9A, 10V
Vgs th Max Id--4V @ 250μA
Gate Charge Qg Vgs--29nC @ 10V
Pd Power Dissipation--3 W
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Fall Time--24 ns
Rise Time--27 ns
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--6.5 A
Vds Drain Source Breakdown Voltage--- 200 V
Vgs th Gate Source Threshold Voltage--- 2 V to - 4 V
Rds On Drain Source Resistance--800 mOhms
Transistor Polarity--P-Channel
Typical Turn Off Delay Time--28 ns
Typical Turn On Delay Time--12 ns
Qg Gate Charge--29 nC
Forward Transconductance Min--2.8 S
Channel Mode--Enhancement
제조사 부분 # 설명 RFQ
Vishay / Siliconix
Vishay / Siliconix
IRF9630STRLPBF MOSFET P-CH -200V HEXFET MOSFET
IRF9630STRLPBF-CUT TAPE 신규 및 오리지널
Vishay
Vishay
IRF9630STRL MOSFET P-CH 200V 6.5A D2PAK
IRF9630STRLPBF MOSFET P-CH 200V 6.5A D2PAK
IRF9630STRR MOSFET P-CH 200V 6.5A D2PAK
IRF9630STRRPBF MOSFET P-Chan 200V 6.5 Amp
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