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| PartNumber | IRFD110PBF | IRFD113PBF | IRFD110 |
| Description | MOSFET N-CH 100V HEXFET MOSFET HEXDI | MOSFET 60V 800mOhm@10V 0.8A N-Ch | MOSFET RECOMMENDED ALT 844-IRFD110PBF |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | N |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | HVMDIP-4 | HVMDIP-4 | HVMDIP-4 |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 1 A | - | - |
| Rds On Drain Source Resistance | 540 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 8.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 1.3 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | Bulk | Tube |
| Height | 3.37 mm | - | - |
| Length | 6.29 mm | - | - |
| Series | IRFD | IRFD | IRFD |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 0.8 S | - | - |
| Fall Time | 9.4 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 16 ns | - | - |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 15 ns | - | - |
| Typical Turn On Delay Time | 6.9 ns | - | - |
| Unit Weight | 0.010582 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
IRFD110PBF | MOSFET N-CH 100V HEXFET MOSFET HEXDI | |
| IRFD120PBF | MOSFET N-CH 100V HEXFET MOSFET HEXDI | ||
| IRFD123PBF | MOSFET N-CH 100V HEXFET MOSFET HEXDI | ||
| IRFD113PBF | MOSFET 60V 800mOhm@10V 0.8A N-Ch | ||
| IRFD110 | MOSFET RECOMMENDED ALT 844-IRFD110PBF | ||
| IRFD120 | MOSFET RECOMMENDED ALT 844-IRFD120PBF | ||
Vishay |
IRFD123PBF | MOSFET N-CH 100V 1.3A 4-DIP | |
| IRFD110 | MOSFET N-CH 100V 1A 4-DIP | ||
| IRFD110PBF | MOSFET N-CH 100V 1A 4-DIP | ||
| IRFD113 | MOSFET N-CH 60V 800MA 4-DIP | ||
| IRFD120 | MOSFET N-CH 100V 1.3A 4-DIP | ||
| IRFD120PBF | MOSFET N-CH 100V 1.3A 4-DIP | ||
| IRFD113PBF | RF Bipolar Transistors MOSFET 60V 800mOhm@10V 0.8A N-Ch | ||
| IRFD110-IR | 신규 및 오리지널 | ||
| IRFD110PBF,IRFD110 | 신규 및 오리지널 | ||
| IRFD110PBF,IRFD110,FD110 | 신규 및 오리지널 | ||
| IRFD110PBF-CN | 신규 및 오리지널 | ||
| IRFD110PBF-PH | 신규 및 오리지널 | ||
| IRFD111 | Small Signal Field-Effect Transistor, 1A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| IRFD111PBF | 신규 및 오리지널 | ||
| IRFD111R | 신규 및 오리지널 | ||
| IRFD112 | Small Signal Field-Effect Transistor, 0.8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| IRFD112PBF | 신규 및 오리지널 | ||
| IRFD113(94-4111) | 신규 및 오리지널 | ||
| IRFD113(HSMRKD) | 신규 및 오리지널 | ||
| IRFD113PBF-IRFD113 | 신규 및 오리지널 | ||
| IRFD120 . | 신규 및 오리지널 | ||
| IRFD120/9120 | 신규 및 오리지널 | ||
| IRFD1201PBF | 신규 및 오리지널 | ||
| IRFD120PBF,FD120,IRFD120 | 신규 및 오리지널 | ||
| IRFD120PBF,IRFD120 | 신규 및 오리지널 | ||
| IRFD120PBF-IRFD | 신규 및 오리지널 | ||
| IRFD120PBF-PHL | 신규 및 오리지널 | ||
| IRFD120PBF. | MOSFET N-CHANNEL 100V ROHS COMPLIANT: NO | ||
| IRFD121 | Small Signal Field-Effect Transistor, 1.3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| IRFD121PBF | 신규 및 오리지널 | ||
| IRFD121R | 신규 및 오리지널 | ||
| IRFD122 | Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| IRFD122PBF | 신규 및 오리지널 | ||
| IRFD123D | 신규 및 오리지널 | ||
| IRFD1Z0 | 신규 및 오리지널 | ||
| IRFD1Z0PBF | 신규 및 오리지널 | ||
| IRFD1Z1 | MOSFET Transistor, N-Channel, TO-250VAR | ||
| IRFD1Z3 | Small Signal Field-Effect Transistor, 0.4A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| IRFD123 | MOSFET N-Chan 100V 1.3 Amp |