 |  | | |
| PartNumber | IRFH5302TRPBF | IRFH5302TRPBF , 2SK1196 | IRFH5302TRPBF,IRFH5302TR |
| Description | MOSFET 30V 1 N-CH HEXFET 2.1mOhms 29nC | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PQFN-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 2.1 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 29 nC | - | - |
| Pd Power Dissipation | 100 W | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | - |
| Height | 0.83 mm | - | - |
| Length | 6 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5 mm | - | - |
| Brand | Infineon / IR | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SP001575636 | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon / IR |
IRFH5302TRPBF | MOSFET 30V 1 N-CH HEXFET 2.1mOhms 29nC | |
| IRFH5302TRPBF , 2SK1196 | 신규 및 오리지널 | ||
| IRFH5302TRPBF,IRFH5302TR | 신규 및 오리지널 | ||
| IRFH5302TRPBF. | 신규 및 오리지널 | ||
Infineon Technologies |
IRFH5302TRPBF | IGBT Transistors MOSFET 30V 1 N-CH HEXFET 2.1mOhms 29nC |