IRFH8337TRP

IRFH8337TRPBF vs IRFH8337TRPBF-CUT TAPE vs IRFH8337TRPBF.

 
PartNumberIRFH8337TRPBFIRFH8337TRPBF-CUT TAPEIRFH8337TRPBF.
DescriptionMOSFET 30V 1 N-CH HEXFET 12.8mOhms 4.7nCTransistor Polarity:N Channel, Continuous Drain Current Id:12A, Drain Source Voltage Vds:30V, On Resistance Rds(on):12.8mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Power Diss
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePQFN-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current16.2 A--
Rds On Drain Source Resistance19.9 mOhms--
Vgs th Gate Source Threshold Voltage1.8 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge10 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.2 W--
ConfigurationSingle--
PackagingReel--
Height0.83 mm--
Length6 mm--
Transistor Type1 N-Channel--
Width5 mm--
BrandInfineon Technologies--
Forward Transconductance Min31 S--
Fall Time4.1 ns--
Product TypeMOSFET--
Rise Time12 ns--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time5.7 ns--
Typical Turn On Delay Time6.4 ns--
Part # AliasesSP001560430--
제조사 부분 # 설명 RFQ
Infineon Technologies
Infineon Technologies
IRFH8337TRPBF MOSFET 30V 1 N-CH HEXFET 12.8mOhms 4.7nC
IRFH8337TRPBF MOSFET N-CH 30V 12A 5X6 PQFN
IRFH8337TRPBF-CUT TAPE 신규 및 오리지널
IRFH8337TRPBF. Transistor Polarity:N Channel, Continuous Drain Current Id:12A, Drain Source Voltage Vds:30V, On Resistance Rds(on):12.8mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Power Diss
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