 |  |  | |
| PartNumber | IRFI640GPBF | IRFI640 | IRFI640G |
| Description | MOSFET N-CH 200V HEXFET MOSFET | MOSFET N-Chan 200V 9.8 Amp | |
| Manufacturer | Vishay | IR | |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 9.8 A | - | - |
| Rds On Drain Source Resistance | 180 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 70 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 40 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Series | IRFI | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 5.2 S | - | - |
| Fall Time | 36 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 51 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 45 ns | - | - |
| Typical Turn On Delay Time | 14 ns | - | - |
| Unit Weight | 0.211644 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
IRFI640GPBF | MOSFET N-CH 200V HEXFET MOSFET | |
Vishay |
IRFI640GPBF | MOSFET N-CH 200V 9.8A TO220FP | |
| IRFI640G | MOSFET N-Chan 200V 9.8 Amp | ||
| IRFI640 | 신규 및 오리지널 |