 | |  | |
| PartNumber | IRFP4227PBF | IRFP4229PBF | IRFP4228PBF |
| Description | MOSFET MOSFT 200V 65A 25mOhm 70nC Qg | MOSFET MOSFT 250V 44A 46mOhm 72nC Qg | IGBT Transistors MOSFET MOSFT 150V 78A 15.5mOhm 72nCAC |
| Manufacturer | Infineon | Infineon | IR |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | MOSFET (Metal Oxide) |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 200 V | 250 V | - |
| Id Continuous Drain Current | 65 A | 44 A | - |
| Rds On Drain Source Resistance | 25 mOhms | 46 mOhms | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 70 nC | 72 nC | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 330 W | 310 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | Bulk |
| Height | 20.7 mm | 20.7 mm | - |
| Length | 15.87 mm | 15.87 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.31 mm | 5.31 mm | - |
| Brand | Infineon Technologies | Infineon / IR | - |
| Forward Transconductance Min | 49 S | 83 S | - |
| Fall Time | 31 ns | 19 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 20 ns | 27 ns | - |
| Factory Pack Quantity | 400 | 400 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 21 ns | 44 ns | - |
| Typical Turn On Delay Time | 33 ns | 25 ns | - |
| Part # Aliases | SP001560510 | SP001578046 | - |
| Unit Weight | 1.340411 oz | 1.340411 oz | - |
| Series | - | - | HEXFET |
| Part Status | - | - | Obsolete |
| FET Type | - | - | N-Channel |
| Drain to Source Voltage (Vdss) | - | - | 150V |
| Current Continuous Drain (Id) @ 25°C | - | - | 78A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - | - | 10V |
| Vgs(th) (Max) @ Id | - | - | 5V @ 250A |
| Gate Charge (Qg) (Max) @ Vgs | - | - | 107nC @ 10V |
| Vgs (Max) | - | - | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | - | - | 4530pF @ 25V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | - | - | 310W (Tc) |
| Rds On (Max) @ Id, Vgs | - | - | 15.5 mOhm @ 33A, 10V |
| Operating Temperature | - | - | -40°C ~ 175°C (TJ) |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | TO-247AC |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRFP4227PBF | MOSFET MOSFT 200V 65A 25mOhm 70nC Qg | |
| IRFP4227PBF | MOSFET N-CH 200V 65A TO-247AC | ||
| IRFP4229PBF | MOSFET N-CH 250V 44A TO-247AC | ||
| IRFP4232PBF | MOSFET N-CH 250V 60A TO-247AC | ||
| IRFP4228PBF | IGBT Transistors MOSFET MOSFT 150V 78A 15.5mOhm 72nCAC | ||
Infineon / IR |
IRFP4229PBF | MOSFET MOSFT 250V 44A 46mOhm 72nC Qg | |
| IRFP4232PBF | MOSFET 250V 1 N-CH PLASMA DISPLAY PANEL HEXFET | ||
| IRFP4227 | 신규 및 오리지널 | ||
| IRFP4229PBF,IRFP4229 | 신규 및 오리지널 | ||
| IRFP4229PBF,IRFP4229,FP4 | 신규 및 오리지널 | ||
| IRFP4232 | MOSFET, N | ||
| IRFP4242PBF | MOSFET Transistor, N Channel, 46 A, 300 V, 49 mohm, 10 V, 5 V RoHS Compliant: Yes |