 |  | | |
| PartNumber | IRFR3303TRLPBF | IRFR3303TR | IRFR3303TRL |
| Description | MOSFET MOSFT 30V 33A 31mOhm 19.3nC | MOSFET N-CH 30V 33A DPAK | MOSFET N-CH 30V 33A DPAK |
| Manufacturer | Infineon | IR | IR |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 33 A | - | - |
| Rds On Drain Source Resistance | 31 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 19.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 57 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon / IR | - | - |
| Forward Transconductance Min | 9.3 S | - | - |
| Fall Time | 28 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 99 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 16 ns | - | - |
| Typical Turn On Delay Time | 11 ns | - | - |
| Part # Aliases | SP001566882 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRFR3303TRPBF | MOSFET 30V 1 N-CH HEXFET 31mOhms 19.3nC | |
| IRFR3303TR | MOSFET N-CH 30V 33A DPAK | ||
| IRFR3303TRL | MOSFET N-CH 30V 33A DPAK | ||
| IRFR3303TRLPBF | MOSFET N-CH 30V 33A DPAK | ||
| IRFR3303TRPBF | MOSFET N-CH 30V 33A DPAK | ||
| IRFR3303TRR | MOSFET N-CH 30V 33A DPAK | ||
Infineon / IR |
IRFR3303TRLPBF | MOSFET MOSFT 30V 33A 31mOhm 19.3nC | |
| IRFR3303TR,FR3303 | 신규 및 오리지널 |