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| PartNumber | IRFR3711ZTRPBF | IRFR3711ZTRPBF,IRFR3711Z | IRFR3711ZTRPF |
| Description | MOSFET 20V 1 N-CH HEXFET 6.5mOhms 29nC | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 93 A | - | - |
| Rds On Drain Source Resistance | 5.7 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.45 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 18 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 79 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | HEXFET Power MOSFET | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon / IR | - | - |
| Forward Transconductance Min | 48 S | - | - |
| Fall Time | 5.2 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 13 ns | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 15 ns | - | - |
| Typical Turn On Delay Time | 12 ns | - | - |
| Part # Aliases | SP001557010 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon / IR |
IRFR3711ZTRPBF | MOSFET 20V 1 N-CH HEXFET 6.5mOhms 29nC | |
Infineon Technologies |
IRFR3711ZTRPBF | MOSFET N-CH 20V 93A DPAK | |
| IRFR3711ZTRPBF,IRFR3711Z | 신규 및 오리지널 | ||
| IRFR3711ZTRPF | 신규 및 오리지널 |