IRFS23N2

IRFS23N20DTRLP vs IRFS23N20DPBF vs IRFS23N20D

 
PartNumberIRFS23N20DTRLPIRFS23N20DPBFIRFS23N20D
DescriptionMOSFET MOSFT 200V 24A 100mOhm 57nCMOSFET 200V 1 N-CH HEXFET 100mOhms 57nCMOSFET N-CH 200V 24A D2PAK
ManufacturerInfineonInfineonIR
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage200 V200 V-
Id Continuous Drain Current24 A24 A-
Rds On Drain Source Resistance100 mOhms100 mOhms-
Vgs th Gate Source Threshold Voltage5.5 V--
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge57 nC57 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation38 W170 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelTube-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon / IR-
Forward Transconductance Min13 S--
Fall Time16 ns16 ns-
Product TypeMOSFETMOSFET-
Rise Time32 ns32 ns-
Factory Pack Quantity8001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time26 ns26 ns-
Typical Turn On Delay Time14 ns14 ns-
Part # AliasesSP001571644SP001550094-
Unit Weight0.139332 oz0.139332 oz-
Type-Smps MOSFET-
제조사 부분 # 설명 RFQ
Infineon Technologies
Infineon Technologies
IRFS23N20DTRLP MOSFET MOSFT 200V 24A 100mOhm 57nC
IRFS23N20DPBF Darlington Transistors MOSFET 200V 1 N-CH HEXFET 100mOhms 57nC
IRFS23N20D MOSFET N-CH 200V 24A D2PAK
IRFS23N20DTRLP MOSFET N-CH 200V 24A D2PAK
IRFS23N20DTRRP RF Bipolar Transistors MOSFET 200V Single NChannel HEXFET Power MOSFET
Infineon / IR
Infineon / IR
IRFS23N20DTRRP MOSFET 200V Single NChannel HEXFET Power MOSFET
IRFS23N20DPBF MOSFET 200V 1 N-CH HEXFET 100mOhms 57nC
IRFS23N20DTRLPBF 신규 및 오리지널
IRFS23N20DTRR 신규 및 오리지널
IRFS23N20DTRRPBF 신규 및 오리지널
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