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| PartNumber | IRFS3607PBF | IRFS3607PBF,FS3607,IRFS3 | IRFS3607PBF,IRFS3607TRPB |
| Description | MOSFET 75V 1 N-CH HEXFET 9mOhms 56nC | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 75 V | - | - |
| Id Continuous Drain Current | 80 A | - | - |
| Rds On Drain Source Resistance | 7.34 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 56 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 140 W | - | - |
| Configuration | Single | - | - |
| Packaging | Tube | - | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 115 S | - | - |
| Fall Time | 96 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 110 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 43 ns | - | - |
| Typical Turn On Delay Time | 16 ns | - | - |
| Part # Aliases | SP001557342 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRFS3607PBF | MOSFET 75V 1 N-CH HEXFET 9mOhms 56nC | |
Infineon Technologies |
IRFS3607PBF | Darlington Transistors MOSFET 75V 1 N-CH HEXFET 9mOhms 56nC | |
| IRFS3607PBF,FS3607,IRFS3 | 신규 및 오리지널 | ||
| IRFS3607PBF,IRFS3607TRPB | 신규 및 오리지널 |