IRG4PC50SD

IRG4PC50SDPBF vs IRG4PC50SD vs IRG4PC50SDPBF,G4PC50SD

 
PartNumberIRG4PC50SDPBFIRG4PC50SDIRG4PC50SDPBF,G4PC50SD
DescriptionIGBT Transistors 600V ULTRAFAST COPACK IGBT
ManufacturerInfineonInfineon Technologies-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.36 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C70 A--
Pd Power Dissipation200 W--
Minimum Operating Temperature- 55 C--
PackagingTubeTube-
Height20.7 mm--
Length15.87 mm--
Width5.31 mm--
BrandInfineon / IR--
Product TypeIGBT Transistors--
Factory Pack Quantity400--
SubcategoryIGBTs--
Part # AliasesSP001537214--
Unit Weight1.340411 oz--
Series---
Package Case-TO-247-3-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-TO-247AC-
Power Max-200W-
Reverse Recovery Time trr-50ns-
Current Collector Ic Max-70A-
Voltage Collector Emitter Breakdown Max-600V-
IGBT Type---
Current Collector Pulsed Icm-140A-
Vce on Max Vge Ic-1.36V @ 15V, 41A-
Switching Energy-720μJ (on), 8.27mJ (off)-
Gate Charge-180nC-
Td on off 25°C-33ns/650ns-
Test Condition-480V, 41A, 5 Ohm, 15V-
제조사 부분 # 설명 RFQ
Infineon / IR
Infineon / IR
IRG4PC50SDPBF IGBT Transistors 600V ULTRAFAST COPACK IGBT
IRG4PC50SD 신규 및 오리지널
IRG4PC50SDPBF,G4PC50SD 신규 및 오리지널
Infineon Technologies
Infineon Technologies
IRG4PC50SDPBF IGBT 600V 70A 200W TO247AC
Top