IRG4RC10

IRG4RC10UTRPBF vs IRG4RC10UTRR vs IRG4RC10UTRLPBF

 
PartNumberIRG4RC10UTRPBFIRG4RC10UTRRIRG4RC10UTRLPBF
DescriptionIGBT Transistors 600V UltraFast 8-60kHzIGBT 600V 8.5A 38W DPAKIGBT 600V 8.5A 38W DPAK
ManufacturerInfineon-Infineon Technologies
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseDPAK-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.6 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C8.5 A--
Pd Power Dissipation38 W--
Minimum Operating Temperature- 55 C--
PackagingReel-Tape & Reel (TR) Alternate Packaging
Height2.39 mm--
Length6.73 mm--
Width6.22 mm--
BrandInfineon / IR--
Product TypeIGBT Transistors--
Factory Pack Quantity2000--
SubcategoryIGBTs--
Part # AliasesSP001541514--
Unit Weight0.012346 oz--
Series---
Package Case--TO-252-3, DPak (2 Leads + Tab), SC-63
Input Type--Standard
Mounting Type--Surface Mount
Supplier Device Package--D-Pak
Power Max--38W
Reverse Recovery Time trr---
Current Collector Ic Max--8.5A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type---
Current Collector Pulsed Icm--34A
Vce on Max Vge Ic--2.6V @ 15V, 5A
Switching Energy--80μJ (on), 160μJ (off)
Gate Charge--15nC
Td on off 25°C--19ns/116ns
Test Condition--480V, 5A, 100 Ohm, 15V
제조사 부분 # 설명 RFQ
Infineon / IR
Infineon / IR
IRG4RC10UTRPBF IGBT Transistors 600V UltraFast 8-60kHz
Infineon Technologies
Infineon Technologies
IRG4RC10UTRR IGBT 600V 8.5A 38W DPAK
IRG4RC10UTRPBF IGBT Transistors 600V UltraFast 8-60kHz
IRG4RC10UTRLPBF IGBT 600V 8.5A 38W DPAK
IRG4RC10UTRPBF. 신규 및 오리지널
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