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| PartNumber | IRG8P15N120KDPBF | IRG8P15N120KD-EPBF | IRG8P15N120KD |
| Description | IGBT Transistors 1200V IGBT GEN8 | IGBT Transistors 1200V IGBT GEN8 | |
| Manufacturer | Infineon | Infineon Technologies | Infineon Technologies |
| Product Category | IGBT Transistors | IGBTs - Single | IGBTs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-247AC-3 | - | - |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 1.7 V | 1.7 V | 1.7 V |
| Maximum Gate Emitter Voltage | 30 V | 30 V | 30 V |
| Continuous Collector Current at 25 C | 30 A | 30 A | 30 A |
| Pd Power Dissipation | 125 W | - | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Packaging | Tube | Tube | Tube |
| Continuous Collector Current Ic Max | 15 A | 15 A | 15 A |
| Brand | Infineon / IR | - | - |
| Gate Emitter Leakage Current | 100 nA | 100 nA | 100 nA |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 25 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | SP001537680 | - | - |
| Series | - | - | - |
| Unit Weight | - | 6500 g | 6500 g |
| Package Case | - | TO-247AD-3 | TO-247AD-3 |
| Input Type | - | Standard | Standard |
| Mounting Type | - | Through Hole | Through Hole |
| Supplier Device Package | - | TO-247AD | TO-247AD |
| Power Max | - | 125W | 125W |
| Reverse Recovery Time trr | - | 60ns | 60ns |
| Current Collector Ic Max | - | 30A | 30A |
| Voltage Collector Emitter Breakdown Max | - | 1200V | 1200V |
| IGBT Type | - | - | - |
| Current Collector Pulsed Icm | - | 30A | 30A |
| Vce on Max Vge Ic | - | 2V @ 15V, 10A | 2V @ 15V, 10A |
| Switching Energy | - | 600μJ (on), 600μJ (off) | 600μJ (on), 600μJ (off) |
| Gate Charge | - | 98nC | 98nC |
| Td on off 25°C | - | 15ns/170ns | 15ns/170ns |
| Test Condition | - | 600V, 10A, 10 Ohm, 15V | 600V, 10A, 10 Ohm, 15V |
| Pd Power Dissipation | - | 125 W | 125 W |
| Collector Emitter Voltage VCEO Max | - | 1200 V | 1200 V |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon / IR |
IRG8P15N120KDPBF | IGBT Transistors 1200V IGBT GEN8 | |
Infineon Technologies |
IRG8P15N120KD-EPBF | IGBT Transistors 1200V IGBT GEN8 | |
| IRG8P15N120KDPBF | IGBT Transistors 1200V IGBT GEN8 | ||
| IRG8P15N120KD | 신규 및 오리지널 |