 |  | | |
| PartNumber | IRGP35B60PDPBF | IRGP35B60PDPBF,GP35B60PD | IRGP35B60PDPBF,IRGP35B60 |
| Description | IGBT Transistors 600V Warp2 150kHz | ||
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-247-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 1.85 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 60 A | - | - |
| Pd Power Dissipation | 308 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tube | - | - |
| Continuous Collector Current Ic Max | 60 A | - | - |
| Height | 20.7 mm | - | - |
| Length | 15.87 mm | - | - |
| Width | 5.31 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Gate Emitter Leakage Current | 100 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 400 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | SP001546216 | - | - |
| Unit Weight | 1.340411 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRGP35B60PDPBF | IGBT Transistors 600V Warp2 150kHz | |
| IRGP35B60PDPBF | IGBT Transistors 600V Warp2 150kHz | ||
| IRGP35B60PDPBF,GP35B60PD | 신규 및 오리지널 | ||
| IRGP35B60PDPBF,IRGP35B60 | 신규 및 오리지널 | ||
| IRGP35B60PDPBF. | 신규 및 오리지널 | ||
| IRGP35B60PDPBFINFINEON-C | 신규 및 오리지널 |