IRGP50B60PDP

IRGP50B60PDPBF vs IRGP50B60PDPBF,GP50B60PD vs IRGP50B60PDPBF,IRGP50B60

 
PartNumberIRGP50B60PDPBFIRGP50B60PDPBF,GP50B60PDIRGP50B60PDPBF,IRGP50B60
DescriptionIGBT Transistors 600V Warp2 150kHz
ManufacturerInfineon--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C75 A--
Pd Power Dissipation370 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingTube--
Continuous Collector Current Ic Max75 A--
Height20.7 mm--
Length15.87 mm--
Width5.31 mm--
BrandInfineon / IR--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity400--
SubcategoryIGBTs--
Part # AliasesSP001536552--
Unit Weight1.340411 oz--
제조사 부분 # 설명 RFQ
Infineon / IR
Infineon / IR
IRGP50B60PDPBF IGBT Transistors 600V Warp2 150kHz
IRGP50B60PDPBF. Soft Recovery Diode
IRGP50B60PDPBF,GP50B60PD 신규 및 오리지널
IRGP50B60PDPBF,IRGP50B60 신규 및 오리지널
Infineon Technologies
Infineon Technologies
IRGP50B60PDPBF IGBT Transistors 600V Warp2 150kHz
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