IRL1004P

IRL1004PBF vs IRL1004PBF,IRFB3206PBF vs IRL1004PBF,IRL1004

 
PartNumberIRL1004PBFIRL1004PBF,IRFB3206PBFIRL1004PBF,IRL1004
DescriptionMOSFET MOSFT 130A 66.7nC 6.5mOhm LogLvAB
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current130 A--
Rds On Drain Source Resistance9 mOhms--
Vgs Gate Source Voltage16 V--
Qg Gate Charge66.7 nC--
Pd Power Dissipation200 W--
ConfigurationSingle--
PackagingTube--
Height15.65 mm--
Length10 mm--
Transistor Type1 N-Channel--
Width4.4 mm--
BrandInfineon Technologies--
Product TypeMOSFET--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Part # AliasesSP001567104--
Unit Weight0.211644 oz--
제조사 부분 # 설명 RFQ
Infineon Technologies
Infineon Technologies
IRL1004PBF MOSFET MOSFT 130A 66.7nC 6.5mOhm LogLvAB
IRL1004PBF Darlington Transistors MOSFET MOSFT 130A 66.7nC 6.5mOhm LogLvAB
IRL1004PBF,IRFB3206PBF 신규 및 오리지널
IRL1004PBF,IRL1004 신규 및 오리지널
IRL1004PBF,IRL1004, 신규 및 오리지널
IRL1004PBF. Transistor Polarity:N Channel, Continuous Drain Current Id:130A, Drain Source Voltage Vds:40V, On Resistance Rds(on):0.0065ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1V, Power Diss
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