IRL2910S

IRL2910STRLPBF vs IRL2910SPBF vs IRL2910STRL

 
PartNumberIRL2910STRLPBFIRL2910SPBFIRL2910STRL
DescriptionMOSFET MOSFT 100V 55A 26mOhm 93.3nC LogLvlMOSFET 100V 1 N-CH HEXFET 26mOhms 54nCMOSFET N-CH 100V 55A D2PAK
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current55 A55 A-
Rds On Drain Source Resistance260 mOhms26 mOhms-
Vgs Gate Source Voltage16 V16 V-
Qg Gate Charge93.3 nC93.3 nC-
Pd Power Dissipation3.8 W3.8 W-
ConfigurationSingleSingle-
PackagingReelTube-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon Technologies-
Product TypeMOSFETMOSFET-
Factory Pack Quantity8001000-
SubcategoryMOSFETsMOSFETs-
Part # AliasesSP001571800SP001578540-
Unit Weight0.139332 oz0.139332 oz-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 175 C-
Channel Mode-Enhancement-
Type-HEXFET Power MOSFET-
Fall Time-55 ns-
Rise Time-100 ns-
Typical Turn Off Delay Time-49 ns-
Typical Turn On Delay Time-11 ns-
제조사 부분 # 설명 RFQ
Infineon / IR
Infineon / IR
IRL2910STRRPBF MOSFET PLANAR_MOSFETS
Infineon Technologies
Infineon Technologies
IRL2910STRLPBF MOSFET MOSFT 100V 55A 26mOhm 93.3nC LogLvl
IRL2910SPBF Darlington Transistors MOSFET 100V 1 N-CH HEXFET 26mOhms 54nC
IRL2910STRL MOSFET N-CH 100V 55A D2PAK
IRL2910STRLPBF MOSFET N-CH 100V 55A D2PAK
IRL2910STRRPBF MOSFET N-CH 100V 55A D2PAK
Infineon Technologies
Infineon Technologies
IRL2910SPBF MOSFET 100V 1 N-CH HEXFET 26mOhms 54nC
IRL2910STRLPBF-CUT TAPE 신규 및 오리지널
IRL2910S MOSFET Transistor, N-Channel, TO-263AB
IRL2910SHR 신규 및 오리지널
IRL2910STRPBF. 신규 및 오리지널
IRL2910STRR 신규 및 오리지널
IRL2910SZ 신규 및 오리지널
IRL2910SZRR 신규 및 오리지널
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