IRLML6346T

IRLML6346TRPBF vs IRLML6346TRP vs IRLML6346TRPBF-CUT TAPE

 
PartNumberIRLML6346TRPBFIRLML6346TRPIRLML6346TRPBF-CUT TAPE
DescriptionMOSFET MOSFT 3.4A 63mOhm 30V 2.5V drv capable
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current3.4 A--
Rds On Drain Source Resistance63 mOhms--
Vgs Gate Source Voltage12 V--
Qg Gate Charge2.9 nC--
Pd Power Dissipation1.3 W--
ConfigurationSingle--
PackagingReelDigi-ReelR Alternate Packaging-
Height1.1 mm--
Length2.9 mm--
Transistor Type1 N-Channel1 N-Channel-
Width1.3 mm--
BrandInfineon Technologies--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Part # AliasesSP001578770--
Unit Weight0.049384 oz0.050717 oz-
Series-HEXFETR-
Package Case-TO-236-3, SC-59, SOT-23-3-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-Micro3/SOT-23-
FET Type-MOSFET N-Channel, Metal Oxide-
Power Max-1.3W-
Drain to Source Voltage Vdss-30V-
Input Capacitance Ciss Vds-270pF @ 24V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-3.4A (Ta)-
Rds On Max Id Vgs-63 mOhm @ 3.4A, 4.5V-
Vgs th Max Id-1.1V @ 10μA-
Gate Charge Qg Vgs-2.9nC @ 4.5V-
Pd Power Dissipation-1.3 W-
Vgs Gate Source Voltage-12 V-
Id Continuous Drain Current-3.4 A-
Vds Drain Source Breakdown Voltage-30 V-
Rds On Drain Source Resistance-63 mOhms-
Qg Gate Charge-2.9 nC-
제조사 부분 # 설명 RFQ
Infineon Technologies
Infineon Technologies
IRLML6346TRPBF MOSFET MOSFT 3.4A 63mOhm 30V 2.5V drv capable
IRLML6346TRPBF MOSFET N-CH 30V 3.4A SOT23
IRLML6346TRP 신규 및 오리지널
IRLML6346TRPBF-CUT TAPE 신규 및 오리지널
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