IRLR36

IRLR3636TRPBF vs IRLR3636TRLPBF vs IRLR3636PBF

 
PartNumberIRLR3636TRPBFIRLR3636TRLPBFIRLR3636PBF
DescriptionMOSFET 60V 1 N-CH HEXFET 6.8mOhms 33nCMOSFET MOSFT 60V 99A 6.8mOhm 33nC Log LvlMOSFET 60V 1 N-CH HEXFET 6.8mOhms 33nC
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3TO-252-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V60 V
Id Continuous Drain Current99 A99 A99 A
Rds On Drain Source Resistance6.8 mOhms6.8 mOhms8.3 mOhms
Vgs th Gate Source Threshold Voltage2.5 V2.5 V-
Vgs Gate Source Voltage16 V-16 V
Qg Gate Charge33 nC49 nC33 nC
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation143 W143 W143 W
ConfigurationSingleSingleSingle
Channel ModeEnhancement--
PackagingReelReelTube
Height2.3 mm2.3 mm2.3 mm
Length6.5 mm6.5 mm6.5 mm
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width6.22 mm6.22 mm6.22 mm
BrandInfineon TechnologiesInfineon / IRInfineon / IR
Forward Transconductance Min31 S31 S-
Fall Time69 ns69 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time216 ns216 ns-
Factory Pack Quantity200030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time43 ns--
Typical Turn On Delay Time45 ns--
Part # AliasesSP001574002SP001569134SP001553190
Unit Weight0.139332 oz0.139332 oz0.139332 oz
제조사 부분 # 설명 RFQ
Infineon Technologies
Infineon Technologies
IRLR3636TRPBF MOSFET 60V 1 N-CH HEXFET 6.8mOhms 33nC
IRLR3636PBF MOSFET N-CH 60V 50A D-PAK
IRLR3636TRPBF MOSFET N-CH 60V 50A DPAK
IRLR3636TRLPBF RF Bipolar Transistors MOSFET MOSFT 60V 99A 6.8mOhm 33nC Log Lvl
Infineon / IR
Infineon / IR
IRLR3636TRLPBF MOSFET MOSFT 60V 99A 6.8mOhm 33nC Log Lvl
IRLR3636PBF MOSFET 60V 1 N-CH HEXFET 6.8mOhms 33nC
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