IS66WVE2M16E

IS66WVE2M16EALL-70BLI vs IS66WVE2M16EALL-70BLI-TR vs IS66WVE2M16EBLL-55BLI

 
PartNumberIS66WVE2M16EALL-70BLIIS66WVE2M16EALL-70BLI-TRIS66WVE2M16EBLL-55BLI
DescriptionSRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 1.7V~1.95V, VDDQ 1.7V~1.95V,48 Ball BGA (6x8 mm), RoHSSRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 1.7V~1.95V, VDDQ 1.7V~1.95V,48 Ball BGA (6x8 mm), RoHSSRAM 32Mb,Pseudo SRAM Asynch/Pg 2Mx16 55ns
ManufacturerISSIISSIISSI
Product CategorySRAMSRAMSRAM
RoHSY-Y
SeriesIS66WVE2M16EALLIS66WVE2M16EALL-
BrandISSIISSIISSI
Moisture SensitiveYesYes-
Product TypeSRAMSRAMSRAM
Factory Pack Quantity4802500480
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
Packaging-Reel-
제조사 부분 # 설명 RFQ
ISSI
ISSI
IS66WVE2M16EBLL-70BLI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V~3.6V, VDDQ 2.7V~3.6V,48 Ball BGA (6x8 mm), RoHS
IS66WVE2M16EALL-70BLI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 1.7V~1.95V, VDDQ 1.7V~1.95V,48 Ball BGA (6x8 mm), RoHS
IS66WVE2M16ECLL-70BLI SRAM 32Mb,Pseudo SRAM 2M x 16 70ns
IS66WVE2M16EBLL-70BLI-TR SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V~3.6V, VDDQ 2.7V~3.6V,48 Ball BGA (6x8 mm), RoHS
IS66WVE2M16ECLL-70BLI-TR SRAM 32Mb,Pseudo SRAM Asynch/Pg 2Mx16 55ns
IS66WVE2M16EALL-70BLI-TR SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 1.7V~1.95V, VDDQ 1.7V~1.95V,48 Ball BGA (6x8 mm), RoHS
IS66WVE2M16EBLL-55BLI SRAM 32Mb,Pseudo SRAM Asynch/Pg 2Mx16 55ns
IS66WVE2M16EBLL-70BLI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V 3.6V, VDDQ 2.7V 3.6V,48 Ball BGA (6x8 mm), RoHS
IS66WVE2M16EALL-70BLI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 1.7V 1.95V, VDDQ 1.7V 1.95V,48 Ball BGA (6x8 mm), RoHS
IS66WVE2M16ECLL-70BLI SRAM 32Mb,Pseudo SRAM 2M x 16 70ns
IS66WVE2M16EBLL-55BLI SRAM 32Mb,Pseudo SRAM Asynch/Pg 2Mx16 55ns
IS66WVE2M16EBLL-55B 신규 및 오리지널
IS66WVE2M16ECLL-70BLI-T 신규 및 오리지널
IS66WVE2M16EBLL70BLI Unclassified
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