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IXFE48N50

IXFE48N50Q vs IXFE48N50 vs IXFE48N50QD2

 
PartNumberIXFE48N50QIXFE48N50IXFE48N50QD2
DescriptionMOSFET 41 Amps 500V 0.11 RdsMOSFET 41 Amps 500V 0.11 Rds
ManufacturerIXYS-IXYS
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleChassis Mount-SMD/SMT
Package / CaseISOPLUS-227-4--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current41 A--
Rds On Drain Source Resistance110 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 40 C-- 40 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation400 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameHyperFET--
PackagingTube-Tube
Height9.65 mm--
Length38.23 mm--
SeriesIXFE48N50Q-IXFE48N50QD2
Transistor Type1 N-Channel-1 N-Channel
Width25.42 mm--
BrandIXYS--
Fall Time10 ns-10 ns
Product TypeMOSFET--
Rise Time22 ns-22 ns
Factory Pack Quantity10--
SubcategoryMOSFETs--
Typical Turn Off Delay Time75 ns-75 ns
Typical Turn On Delay Time33 ns-33 ns
Package Case--ISOPLUS-227-4
Pd Power Dissipation--400 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--41 A
Vds Drain Source Breakdown Voltage--500 V
Rds On Drain Source Resistance--110 mOhms
제조사 부분 # 설명 RFQ
Littelfuse
Littelfuse 		IXFE48N50Q MOSFET 41 Amps 500V 0.11 Rds
IXFE48N50Q MOSFET 41 Amps 500V 0.11 Rds
IXFE48N50 신규 및 오리지널
IXFE48N50QD3 MOSFET 41 Amps 500V 110 Rds
IXFE48N50QD2 MOSFET 41 Amps 500V 0.11 Rds
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