PartNumber | IXFH80N65X2 | IXFH80N30P3 | IXFH80N10 |
Description | MOSFET MOSFET 650V/80A Ultra Junction X2 | MOSFET Polar3 HiPerFET Power MOSFET | MOSFET 80 Amps 100V 0.125 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | - | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | - | 100 V |
Id Continuous Drain Current | 80 A | - | 80 A |
Rds On Drain Source Resistance | 40 mOhms | - | 12.5 mOhms |
Vgs th Gate Source Threshold Voltage | 2.7 V | - | - |
Vgs Gate Source Voltage | 30 V | - | 20 V |
Qg Gate Charge | 143 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 890 W | - | 300 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | HiPerFET | HiPerFET | HyperFET |
Packaging | Tube | Tube | Tube |
Series | 650V Ultra Junction X2 | IXFH80N30 | IXFH80N10 |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 36 S | - | - |
Fall Time | 11 ns | - | 26 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 42 ns | - | 63 ns |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 60 ns | - | 90 ns |
Typical Turn On Delay Time | 40 ns | - | 41 ns |
Unit Weight | 0.056438 oz | 0.056438 oz | 0.229281 oz |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Height | - | - | 21.46 mm |
Length | - | - | 16.26 mm |
Width | - | - | 5.3 mm |
제조사 | 부분 # | 설명 | RFQ |
---|---|---|---|
Littelfuse |
IXFH80N65X2-4 | MOSFET 650V/80A TO-247-4L | |
IXFH80N65X2 | MOSFET MOSFET 650V/80A Ultra Junction X2 | ||
IXFH94N30P3 | MOSFET N-Channel: Power MOSFET w/Fast Diode | ||
IXFH88N30P | MOSFET 88 Amps 300V 0.04 Rds | ||
IXFH86N30T | MOSFET Trench HiperFET Power MOSFET | ||
IXFH96N20P | MOSFET 96 Amps 200V 0.024 Rds | ||
IXFH96N15P | MOSFET 96 Amps 150V 0.024 Rds | ||
IXFH90N20X3 | MOSFET DISCMSFT NCHULTRJNCTN X3CLASS | ||
IXFH94N30T | MOSFET Trench HiperFETs Power MOSFET | ||
IXFH80N30P3 | MOSFET Polar3 HiPerFET Power MOSFET | ||
IXFH9N80 | MOSFET 9 Amps 800V 0.9 Rds | ||
IXFH80N10 | MOSFET 80 Amps 100V 0.125 Rds | ||
IXFH8N80 | MOSFET 8 Amps 800V 1.1 Rds | ||
IXFH88N20Q | MOSFET 88 Amps 200V 0.03 Rds | ||
IXFH80N65X2 | MOSFET N-CH 650V 80A TO-247 | ||
IXFH80N65X2-4 | MOSFET N-CH | ||
IXFH90N20X3 | 200V/90A ULTRA JUNCTION X3-CLASS | ||
IXFH86N30T | Darlington Transistors MOSFET Trench HiperFET Power MOSFET | ||
IXFH96N20P | Darlington Transistors MOSFET 96 Amps 200V 0.024 Rds | ||
IXFH88N20Q | MOSFET 88 Amps 200V 0.03 Rds | ||
IXFH80N10 | MOSFET 80 Amps 100V 0.125 Rds | ||
IXFH9N80 | IGBT Transistors MOSFET 9 Amps 800V 0.9 Rds | ||
IXFH94N30P3 | IGBT Transistors MOSFET N-Channel: Power MOSFET w/Fast Diode | ||
IXFH88N30P | IGBT Transistors MOSFET 88 Amps 300V 0.04 Rds | ||
IXFH94N30T | MOSFET Trench HiperFETs Power MOSFET | ||
IXFH8N80 | IGBT Transistors MOSFET 8 Amps 800V 1.1 Rds | ||
IXFH80N30P3 | MOSFET Polar3 HiPerFET Power MOSFET | ||
IXFH96N15P | IGBT Transistors MOSFET 96 Amps 150V 0.024 Rds | ||
IXFH80N100 | 신규 및 오리지널 | ||
IXFH80N65X | 신규 및 오리지널 | ||
IXFH90N20Q | 신규 및 오리지널 | ||
IXFH9123 | 신규 및 오리지널 | ||
IXFH9N65 | 신규 및 오리지널 | ||
IXFH80N25X3 | MOSFET N-CH 250V 80A TO247 | ||
IXFH9N80Q | Darlington Transistors MOSFET 9 Amps 800V 1.1 Rds | ||
IXFH80N15Q | MOSFET 80 Amps 150V 0.0225 Rds | ||
IXFH80N20Q | MOSFET 200V 80A | ||
IXFH80N10Q | MOSFET 100V 80A | ||
IXFH88N30 | 신규 및 오리지널 |