IXFH11

IXFH110N10P vs IXFH110N15T2 vs IXFH110N25T

 
PartNumberIXFH110N10PIXFH110N15T2IXFH110N25T
DescriptionMOSFET 110 Amps 100V 0.015 RdsMOSFET 110 Amps 150VMOSFET 110 Amps 0V
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3TO-247-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V150 V250 V
Id Continuous Drain Current110 A150 A110 A
Rds On Drain Source Resistance15 mOhms13 mOhms24 mOhms
Vgs th Gate Source Threshold Voltage5 V4.5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge110 nC150 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation480 W480 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancement-
TradenameHiPerFETHiPerFETHiPerFET
PackagingTubeTubeTube
Height21.46 mm--
Length16.26 mm--
SeriesIXFH110N10PIXFH110N15T2IXFH110N25T
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypePolarHT HiPerFET Power MOSFETPower MOSFET-
Width5.3 mm--
BrandIXYSIXYSIXYS
Forward Transconductance Min30 S115 S-
Fall Time25 ns18 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time25 ns16 ns-
Factory Pack Quantity303030
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time65 ns33 ns-
Typical Turn On Delay Time21 ns33 ns-
Unit Weight0.229281 oz0.229281 oz0.056438 oz
Product-MOSFET Power-
제조사 부분 # 설명 RFQ
Littelfuse
Littelfuse
IXFH110N10P MOSFET 110 Amps 100V 0.015 Rds
IXFH110N15T2 MOSFET 110 Amps 150V
IXFH110N25T MOSFET 110 Amps 0V
IXFH11N80 MOSFET 11 Amps 800V
IXFH11N100 신규 및 오리지널
IXFH110N10P Darlington Transistors MOSFET 110 Amps 100V 0.015 Rds
IXFH11N80 MOSFET 11 Amps 800V
IXFH110N25T MOSFET 110 Amps 0V
IXFH110N15T2 MOSFET 110 Amps 150V
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