IXFH14N8

IXFH14N80P vs IXFH14N85X vs IXFH14N80

 
PartNumberIXFH14N80PIXFH14N85XIXFH14N80
DescriptionMOSFET DIODE Id14 BVdass800MOSFET DISCMSFT NCH ULTRJNCTN XCLASSMOSFET 14 Amps 800V 0.7 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3TO-247-3
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage800 V-800 V
Id Continuous Drain Current14 A-14 A
Rds On Drain Source Resistance720 mOhms-700 mOhms
Vgs th Gate Source Threshold Voltage5.5 V--
Vgs Gate Source Voltage30 V-20 V
Qg Gate Charge61 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation400 W-300 W
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameHiPerFETHiPerFETHyperFET
PackagingTubeTubeTube
Height21.46 mm-21.46 mm
Length16.26 mm-16.26 mm
SeriesIXFH14N80X-ClassIXFH14N80
Transistor Type1 N-Channel-1 N-Channel
TypePolarHV HiPerFET Power MOSFET--
Width5.3 mm-5.3 mm
BrandIXYSIXYSIXYS
Forward Transconductance Min8 S--
Fall Time27 ns-32 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time29 ns-33 ns
Factory Pack Quantity303030
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time62 ns-63 ns
Typical Turn On Delay Time26 ns-20 ns
Unit Weight0.229281 oz0.211644 oz0.229281 oz
제조사 부분 # 설명 RFQ
Littelfuse
Littelfuse
IXFH14N80P MOSFET DIODE Id14 BVdass800
IXFH14N85X MOSFET DISCMSFT NCH ULTRJNCTN XCLASS
IXFH14N80 MOSFET 14 Amps 800V 0.7 Rds
IXFH14N85X MOSFET N-CH 850V 14A TO247AD
IXFH14N80P Darlington Transistors MOSFET DIODE Id14 BVdass800
IXFH14N80 MOSFET 14 Amps 800V 0.7 Rds
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