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| PartNumber | IXFH15N100Q3 | IXFH15N100Q-IXYS | IXFH15N100Q |
| Description | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/15A | MOSFET 15 Amps 1000V 0.725 Rds | |
| Manufacturer | IXYS | IXYS | |
| Product Category | MOSFET | IC Chips | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 1 kV | - | - |
| Id Continuous Drain Current | 15 A | - | - |
| Rds On Drain Source Resistance | 1.05 Ohms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 64 nC | - | - |
| Pd Power Dissipation | 690 W | - | - |
| Configuration | Single | - | Single |
| Tradename | HiPerFET | - | HyperFET |
| Packaging | Tube | - | Tube |
| Series | IXFH15N100 | - | IXFH15N100 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | IXYS | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 250 ns | - | 27 ns |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.056438 oz | - | 0.229281 oz |
| Package Case | - | - | TO-247-3 |
| Pd Power Dissipation | - | - | 360 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 14 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 15 A |
| Vds Drain Source Breakdown Voltage | - | - | 1000 V |
| Rds On Drain Source Resistance | - | - | 700 mOhms |
| Typical Turn Off Delay Time | - | - | 67 ns |
| Typical Turn On Delay Time | - | - | 28 ns |
| Channel Mode | - | - | Enhancement |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Littelfuse |
IXFH15N100Q3 | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/15A | |
| IXFH15N100Q-IXYS | 신규 및 오리지널 | ||
| IXFH15N100Q3 | MOSFET N-CH 1000V 15A TO-247 | ||
| IXFH15N100Q | MOSFET 15 Amps 1000V 0.725 Rds |