![]() | |||
| PartNumber | IXFH40N30 | IXFH40N30P3 | IXFH40N30Q |
| Description | MOSFET 300V 40A | MOSFET N-CH 300V 40A TO-247AD | |
| Manufacturer | IXYS | - | IXYS |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 300 V | - | - |
| Id Continuous Drain Current | 40 A | - | - |
| Rds On Drain Source Resistance | 85 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 300 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | HyperFET | - | HyperFET |
| Packaging | Tube | - | Tube |
| Height | 21.46 mm | - | - |
| Length | 16.26 mm | - | - |
| Series | IXFH40N30 | - | HiPerFET |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 5.3 mm | - | - |
| Brand | IXYS | - | - |
| Forward Transconductance Min | 25 S | - | - |
| Fall Time | 45 ns | - | 12 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 60 ns | - | 35 ns |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 75 ns | - | 40 ns |
| Typical Turn On Delay Time | 20 ns | - | 20 ns |
| Unit Weight | 0.229281 oz | - | 0.229281 oz |
| Package Case | - | - | TO-247-3 |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | TO-247AD (IXFH) |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 300W |
| Drain to Source Voltage Vdss | - | - | 300V |
| Input Capacitance Ciss Vds | - | - | 3100pF @ 25V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 40A (Tc) |
| Rds On Max Id Vgs | - | - | 80 mOhm @ 500mA, 10V |
| Vgs th Max Id | - | - | 4V @ 4mA |
| Gate Charge Qg Vgs | - | - | 140nC @ 10V |
| Pd Power Dissipation | - | - | 300 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 40 A |
| Vds Drain Source Breakdown Voltage | - | - | 300 V |
| Rds On Drain Source Resistance | - | - | 80 mOhms |
| Forward Transconductance Min | - | - | 30 S |