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| PartNumber | IXFH50N20 | IXFH50N20P | IXFH50N20SP |
| Description | MOSFET DIODE Id50 BVdass200 | ||
| Manufacturer | IXYS | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 50 A | - | - |
| Rds On Drain Source Resistance | 45 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 300 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | HyperFET | - | - |
| Packaging | Tube | - | - |
| Height | 21.46 mm | - | - |
| Length | 16.26 mm | - | - |
| Series | IXFH50N20 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.3 mm | - | - |
| Brand | IXYS | - | - |
| Forward Transconductance Min | 32 S | - | - |
| Fall Time | 16 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 15 ns | - | - |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 72 ns | - | - |
| Typical Turn On Delay Time | 18 ns | - | - |
| Unit Weight | 0.229281 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Littelfuse |
IXFH50N20 | MOSFET DIODE Id50 BVdass200 | |
| IXFH50N20P | 신규 및 오리지널 | ||
| IXFH50N20SP | 신규 및 오리지널 | ||
| IXFH50N20 | MOSFET DIODE Id50 BVdass200 |