IXFK180N stock, IXFK180N, IXFK180N10


PartNumber	IXFK180N10	IXFK180N25T	IXFK180N07
Description	MOSFET 100V 180A	MOSFET 180A 250V	MOSFET 180 Amps 70V 0.006 Rds
Manufacturer	IXYS	IXYS	IXYS
Product Category	MOSFET	MOSFET	MOSFET
RoHS	Y	Y	Y
Technology	Si	Si	Si
Mounting Style	Through Hole	Through Hole	Through Hole
Package / Case	TO-264-3	TO-264-3	TO-264-3
Number of Channels	1 Channel	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	100 V	250 V	70 V
Id Continuous Drain Current	180 A	180 A	180 A
Rds On Drain Source Resistance	8 mOhms	12.9 mOhms	6 mOhms
Vgs Gate Source Voltage	20 V	20 V	20 V
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Pd Power Dissipation	560 W	1.39 W	560 W
Configuration	Single	Single	Single
Channel Mode	Enhancement	Enhancement	Enhancement
Tradename	HiPerFET	HiPerFET	HiPerFET
Packaging	Tube	Tube	Tube
Height	26.16 mm	26.16 mm	26.16 mm
Length	19.96 mm	19.96 mm	19.96 mm
Series	IXFK180N10	IXFK180N25	IXFK180N07
Transistor Type	1 N-Channel	1 N-Channel	1 N-Channel
Width	5.13 mm	5.13 mm	5.13 mm
Brand	IXYS	IXYS	IXYS
Forward Transconductance Min	90 S	100 S	90 S/55 S
Fall Time	65 ns	28 ns	55 ns
Product Type	MOSFET	MOSFET	MOSFET
Rise Time	90 ns	33 ns	90 ns
Factory Pack Quantity	25	25	25
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	140 ns	100 ns	140 ns
Typical Turn On Delay Time	50 ns	37 ns	65 ns
Unit Weight	0.352740 oz	0.352740 oz	0.352740 oz
Vgs th Gate Source Threshold Voltage	-	5 V	-
Qg Gate Charge	-	345 nC	-
Type	-	GigaMOS Power MOSFET	-

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IXFK180N