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| PartNumber | IXFK27N80Q |
| Description | MOSFET 27 Amps 800V 0.32 Rds |
| Manufacturer | IXYS |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | Through Hole |
| Package / Case | TO-264-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V |
| Id Continuous Drain Current | 27 A |
| Rds On Drain Source Resistance | 320 mOhms |
| Vgs th Gate Source Threshold Voltage | 4.5 V |
| Vgs Gate Source Voltage | 20 V |
| Qg Gate Charge | 170 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd Power Dissipation | 500 W |
| Configuration | Single |
| Channel Mode | Enhancement |
| Tradename | HyperFET |
| Packaging | Tube |
| Height | 26.16 mm |
| Length | 19.96 mm |
| Series | IXFK27N80 |
| Transistor Type | 1 N-Channel |
| Type | HiPerFET Power MOSFETS Q-CLASS |
| Width | 5.13 mm |
| Brand | IXYS |
| Forward Transconductance Min | 20 S |
| Fall Time | 13 ns |
| Product Type | MOSFET |
| Rise Time | 28 ns |
| Factory Pack Quantity | 25 |
| Subcategory | MOSFETs |
| Typical Turn Off Delay Time | 50 ns |
| Typical Turn On Delay Time | 20 ns |
| Unit Weight | 0.352740 oz |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Littelfuse |
IXFK27N80Q | MOSFET 27 Amps 800V 0.32 Rds | |
| IXFK27N80Q | Darlington Transistors MOSFET 27 Amps 800V 0.32 Rds |