| PartNumber | IXFK520N075T2 | IXFK50N85X | IXFK50N50 |
| Description | MOSFET TRENCHT2 PWR MOSFET 75V 520A | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | MOSFET 50 Amps 500V 0.1 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-264-3 | TO-264-3 | TO-264-3 |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 75 V | 850 V | 500 V |
| Id Continuous Drain Current | 520 A | 50 A | 50 A |
| Rds On Drain Source Resistance | 2.2 mOhms | 105 mOhms | 100 mOhms |
| Vgs th Gate Source Threshold Voltage | 5 V | 3.5 V | - |
| Vgs Gate Source Voltage | 20 V | 30 V | 20 V |
| Qg Gate Charge | 545 nC | 152 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
| Pd Power Dissipation | 1.25 kW | 890 W | 560 W |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | HiPerFET | HiPerFET | HyperFET |
| Packaging | Tube | Tube | Tube |
| Height | 26.59 mm | - | 26.16 mm |
| Length | 20.29 mm | - | 19.96 mm |
| Series | IXFK520N075 | X-Class | IXFK50N50 |
| Type | TrenchT2 GigaMOS HiperFET Power MOSFET | - | - |
| Width | 5.31 mm | - | 5.13 mm |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 65 S | 19 S | - |
| Fall Time | 35 ns | 14 ns | 45 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 36 ns | 30 ns | 60 ns |
| Factory Pack Quantity | 25 | 25 | 25 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 80 ns | 69 ns | 120 ns |
| Typical Turn On Delay Time | 48 ns | 27 ns | 45 ns |
| Unit Weight | 0.264555 oz | - | 0.352740 oz |
| Number of Channels | - | 1 Channel | 1 Channel |
| Configuration | - | Single | Single |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |