 | |  | |
| PartNumber | IXFN360N10T | IXFN360N15T2 | IXFN360N15 |
| Description | MOSFET 360 Amps 100V | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Chassis Mount | Chassis Mount | - |
| Package / Case | SOT-227-4 | SOT-227-4 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 150 V | - |
| Id Continuous Drain Current | 360 A | 310 A | - |
| Rds On Drain Source Resistance | 2.6 mOhms | 4 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 525 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 830 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Tradename | HiPerFET | HiPerFET | - |
| Packaging | Tube | Tube | - |
| Product | MOSFET Power | - | - |
| Series | IXFN360N10 | IXFN360N15 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | Power MOSFET | GigaMOS Trench T2 HiperFet | - |
| Brand | IXYS | IXYS | - |
| Forward Transconductance Min | 110 S | - | - |
| Fall Time | 160 ns | 265 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 100 ns | 170 ns | - |
| Factory Pack Quantity | 10 | 10 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 80 ns | - | - |
| Typical Turn On Delay Time | 47 ns | - | - |
| Unit Weight | 1.058219 oz | 1.058219 oz | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Littelfuse |
IXFN360N10T | MOSFET 360 Amps 100V | |
| IXFN360N15T2 | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | ||
| IXFN360N10T | MOSFET N-CH 100V 360A SOT-227B | ||
| IXFN360N15 | 신규 및 오리지널 | ||
| IXFN360N15T2 | MOSFET N-CH 150V 310A SOT227 |