 | | |
| PartNumber | IXFR12N120P | IXFR12N100Q |
| Description | MOSFET 12 Amps 1200V 1 Rds | MOSFET 12 Amps 1000V 1 Rds |
| Manufacturer | IXYS | IXYS |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 |
| Vds Drain Source Breakdown Voltage | 1.2 kV | 1 kV |
| Id Continuous Drain Current | 12 A | 10 A |
| Rds On Drain Source Resistance | 1 Ohms | 1.1 Ohms |
| Packaging | Tube | Tube |
| Series | IXFR12N120 | IXFR12N100 |
| Brand | IXYS | IXYS |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs |
| Unit Weight | 0.056438 oz | 0.056438 oz |
| Number of Channels | - | 1 Channel |
| Transistor Polarity | - | N-Channel |
| Vgs Gate Source Voltage | - | 20 V |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 250 W |
| Configuration | - | Single |
| Channel Mode | - | Enhancement |
| Tradename | - | HyperFET |
| Height | - | 21.34 mm |
| Length | - | 16.13 mm |
| Transistor Type | - | 1 N-Channel |
| Width | - | 5.21 mm |
| Fall Time | - | 15 ns |
| Rise Time | - | 23 ns |
| Typical Turn Off Delay Time | - | 40 ns |
| Typical Turn On Delay Time | - | 20 ns |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Littelfuse |
IXFR12N120P | MOSFET 12 Amps 1200V 1 Rds | |
| IXFR12N100Q | MOSFET 12 Amps 1000V 1 Rds | ||
| IXFR12N100Q | MOSFET 12 Amps 1000V 1 Rds | ||
| IXFR12N120P | MOSFET 12 Amps 1200V 1 Rds | ||
| IXFR12N100F | Trans MOSFET N-CH 1KV 10A 3-Pin(3+Tab) ISOPLUS 247 | ||
| IXFR12N100 | MOSFET N-CH 1000V 10A ISOPLUS247 |