| PartNumber | IXGK120N60B3 | IXGK120N60B | IXGK120N60C2 |
| Description | IGBT Transistors DISC IGBT PT-MID FREQUENCY | IGBT 600V 200A 660W TO264AA | IGBT 600V 75A 830W TO264 |
| Manufacturer | IXYS | - | - |
| Product Category | IGBT Transistors | - | - |
| Technology | Si | - | - |
| Package / Case | TO-264-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 1.5 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 280 A | - | - |
| Pd Power Dissipation | 780 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Continuous Collector Current Ic Max | 600 A | - | - |
| Brand | IXYS | - | - |
| Gate Emitter Leakage Current | 100 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 25 | - | - |
| Subcategory | IGBTs | - | - |