 |  | | |
| PartNumber | IXGQ200N30PB | IXGQ20N120B | IXGQ20N120BD1 |
| Description | IGBT Transistors G-series A,B,C | IGBT 1200V 40A 190W TO3P | IGBT 1200V 40A 190W TO3P |
| Manufacturer | IXYS | IXYS | - |
| Product Category | IGBT Transistors | IGBTs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Series | IXGQ200N30 | - | - |
| Packaging | Tube | Tube | - |
| Brand | IXYS | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | IGBTs | - | - |
| Unit Weight | 0.194007 oz | - | - |
| Package Case | - | TO-3P-3, SC-65-3 | - |
| Input Type | - | Standard | - |
| Mounting Type | - | Through Hole | - |
| Supplier Device Package | - | TO-3P | - |
| Power Max | - | 190W | - |
| Reverse Recovery Time trr | - | 40ns | - |
| Current Collector Ic Max | - | 40A | - |
| Voltage Collector Emitter Breakdown Max | - | 1200V | - |
| IGBT Type | - | PT | - |
| Current Collector Pulsed Icm | - | 100A | - |
| Vce on Max Vge Ic | - | 3.4V @ 15V, 20A | - |
| Switching Energy | - | 2.1mJ (off) | - |
| Gate Charge | - | 62nC | - |
| Td on off 25°C | - | 20ns/270ns | - |
| Test Condition | - | 960V, 20A, 10 Ohm, 15V | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Littelfuse |
IXGQ28N120B | IGBT Transistors 28 Amps 1200 V 3.5 Rds | |
| IXGQ200N30PB | IGBT Transistors G-series A,B,C | ||
| IXGQ240N30PB | IGBT Transistors POLAR IGBTS PDP APP 300V 500A | ||
| IXGQ20N120B | IGBT 1200V 40A 190W TO3P | ||
| IXGQ20N120BD1 | IGBT 1200V 40A 190W TO3P | ||
| IXGQ240N30P | 신규 및 오리지널 | ||
| IXGQ25N100Y4 | 신규 및 오리지널 | ||
| IXGQ28N120BD1 | IGBT 1200V 50A 250W TO3P | ||
| IXGQ240N30PB | IGBT Transistors POLAR IGBTS PDP APP 300V 500A | ||
| IXGQ200N30PB | IGBT Transistors G-series A,B,C | ||
| IXGQ28N120B | IGBT Transistors 28 Amps 1200 V 3.5 Rds |