IXGT24N1

IXGT24N170A vs IXGT24N170 vs IXGT24N170AH1

 
PartNumberIXGT24N170AIXGT24N170IXGT24N170AH1
DescriptionIGBT Transistors 24 Amps 1200 V 5 V RdsIGBT Transistors 24 Amps 1200 V 3.3 V RdsIGBT Transistors 48 Amps 1700V 6.0 V Rds
ManufacturerIXYSIXYSIXYS
Product CategoryIGBT TransistorsIGBT TransistorsIGBTs - Single
RoHSYY-
TechnologySiSi-
Package / CaseTO-268-3TO-268-3-
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max1700 V1.7 kV-
Collector Emitter Saturation Voltage4.5 V2.5 V6 V
Maximum Gate Emitter Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesIXGT24N170IXGT24N170IXGT24N170
PackagingTubeTubeTube
Continuous Collector Current Ic Max25 A150 A-
Height5.1 mm5.1 mm-
Length16.05 mm16.05 mm-
Width14 mm14 mm-
BrandIXYSIXYS-
Continuous Collector Current24 A50 A-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity3030-
SubcategoryIGBTsIGBTs-
Unit Weight0.158733 oz0.158733 oz0.229281 oz
Continuous Collector Current at 25 C-50 A-
Pd Power Dissipation-250 W-
Operating Temperature Range-- 55 C to + 150 C-
Gate Emitter Leakage Current-100 nA-
Package Case--TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Input Type--Standard
Mounting Type--Surface Mount
Supplier Device Package--TO-268
Power Max--250W
Reverse Recovery Time trr--200ns
Current Collector Ic Max--24A
Voltage Collector Emitter Breakdown Max--1700V
IGBT Type--NPT
Current Collector Pulsed Icm--75A
Vce on Max Vge Ic--6V @ 15V, 16A
Switching Energy--2.97mJ (on), 790μJ (off)
Gate Charge--140nC
Td on off 25°C--21ns/336ns
Test Condition--850V, 24A, 10 Ohm, 15V
제조사 부분 # 설명 RFQ
Littelfuse
Littelfuse
IXGT24N170A IGBT Transistors 24 Amps 1200 V 5 V Rds
IXGT24N170 IGBT Transistors 24 Amps 1200 V 3.3 V Rds
IXGT24N170AH1 IGBT Transistors 48 Amps 1700V 6.0 V Rds
IXGT24N170A IGBT Transistors 24 Amps 1200 V 5 V Rds
IXGT24N170 IGBT Transistors 24 Amps 1200 V 3.3 V Rds
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