IXTN1

IXTN102N65X2 vs IXTN110N20L2 vs IXTN120P20T

 
PartNumberIXTN102N65X2IXTN110N20L2IXTN120P20T
DescriptionMOSFET DISCMSFTNCHULTJNCTNX2CLASS (MIMOSFET 100Amps 200VMOSFET TrenchP Power MOSFET
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYY-
TechnologySiSiSi
Mounting StyleChassis MountChassis MountChassis Mount
Package / CaseSOT-227-4SOT-227-4SOT-227-4
Transistor PolarityN-ChannelN-ChannelP-Channel
Vds Drain Source Breakdown Voltage650 V200 V200 V
Id Continuous Drain Current76 A100 A106 A
Rds On Drain Source Resistance30 mOhms24 mOhms30 mOhms
Vgs th Gate Source Threshold Voltage3 V4.5 V-
Vgs Gate Source Voltage30 V20 V-
Qg Gate Charge152 nC500 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation595 W735 W-
ConfigurationSingle--
Channel ModeEnhancementEnhancement-
TradenameHiPerFETLinear L2-
PackagingTubeTubeTube
SeriesX2-ClassIXTN110N20IXTN120P20
BrandIXYSIXYSIXYS
Forward Transconductance Min50 S55 S-
Fall Time11 ns135 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time28 ns100 ns-
Factory Pack Quantity101010
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time67 ns33 ns-
Typical Turn On Delay Time37 ns40 ns-
Unit Weight1.058219 oz1.058219 oz1.058219 oz
Height-12.22 mm-
Length-38.23 mm-
Type-Linear L2 Power MOSFET-
Width-25.42 mm-
제조사 부분 # 설명 RFQ
Littelfuse
Littelfuse
IXTN170P10P Discrete Semiconductor Modules -170.0 Amps -100V 0.012 Rds
IXTN102N65X2 MOSFET DISCMSFTNCHULTJNCTNX2CLASS (MI
IXTN110N20L2 MOSFET 100Amps 200V
IXTN17N120L MOSFET 17 Amps 1200V
IXTN120P20T MOSFET TrenchP Power MOSFET
IXTN102N65X2 MOSFET N-CH 650V 76A X2 SOT-227
IXTN1378 신규 및 오리지널
IXTN15N100 MOSFET, N, SOT-227B
IXTN15N90S1 신규 및 오리지널
IXTN17N100L 신규 및 오리지널
IXTN17N120L MOSFET N-CH 1200V 15A SOT-227B
IXTN110N20L2 MOSFET N-CH 200V 100A SOT-227
IXTN120P20T MOSFET P-CH 200V 106A SOT-227
IXTN170P10P Discrete Semiconductor Modules -170.0 Amps -100V 0.012 Rds
IXTN120N25 MOSFET 120 Amps 250V 0.02 Rds
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