| PartNumber | IXTN210P10T | IXTN200N10T | IXTN21N100 |
| Description | Discrete Semiconductor Modules TrenchP Channel Power MOSFETs | MOSFET 100V 200A | MOSFET 21 Amps 100V 0.55 Ohm Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | Discrete Semiconductor Modules | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Type | MOSFET | - | - |
| Mounting Style | Screw Mount | - | Chassis Mount |
| Package / Case | SOT-227-4 | - | SOT-227-4 |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Series | IXTN210P10 | IXTN200N10TÂ - Gen1 | IXTN21N100 |
| Packaging | Tube | Tube | Tube |
| Brand | IXYS | IXYS | IXYS |
| Product Type | Discrete Semiconductor Modules | MOSFET | MOSFET |
| Factory Pack Quantity | 10 | 10 | 10 |
| Subcategory | Discrete Semiconductor Modules | MOSFETs | MOSFETs |
| Tradename | TrenchP | HiPerFET | - |
| Unit Weight | 1.058219 oz | 1.058219 oz | 1.058219 oz |
| Technology | - | Si | Si |
| Number of Channels | - | - | 1 Channel |
| Transistor Polarity | - | - | N-Channel |
| Vds Drain Source Breakdown Voltage | - | - | 1 kV |
| Id Continuous Drain Current | - | - | 21 A |
| Rds On Drain Source Resistance | - | - | 550 mOhms |
| Vgs Gate Source Voltage | - | - | 20 V |
| Pd Power Dissipation | - | - | 520 W |
| Configuration | - | - | Single |
| Channel Mode | - | - | Enhancement |
| Height | - | - | 9.6 mm |
| Length | - | - | 38.23 mm |
| Transistor Type | - | - | 1 N-Channel |
| Width | - | - | 25.42 mm |
| Forward Transconductance Min | - | - | 24 S |
| Fall Time | - | - | 40 ns |
| Rise Time | - | - | 50 ns |
| Typical Turn Off Delay Time | - | - | 100 ns |
| Typical Turn On Delay Time | - | - | 30 ns |