 | |  | |
| PartNumber | IXTQ18N60P | IXTQ180N10T | IXTQ180N33TC |
| Description | MOSFET 18.0 Amps 600 V 0.42 Ohm Rds | MOSFET 180 Amps 100V 6.1 Rds | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-3P-3 | TO-3P-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 100 V | - |
| Id Continuous Drain Current | 18 A | 180 A | - |
| Rds On Drain Source Resistance | 420 mOhms | 6.4 mOhms | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 175 C | - |
| Pd Power Dissipation | 360 W | 480 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | - |
| Height | 20.3 mm | 20.3 mm | - |
| Length | 15.8 mm | 15.8 mm | - |
| Series | IXTQ18N60 | IXTQ180N10 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.9 mm | 4.9 mm | - |
| Brand | IXYS | IXYS | - |
| Forward Transconductance Min | 16 S | - | - |
| Fall Time | 22 ns | 31 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 22 ns | 54 ns | - |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 62 ns | 42 ns | - |
| Typical Turn On Delay Time | 21 ns | 33 ns | - |
| Unit Weight | 0.194007 oz | 0.194007 oz | - |
| Tradename | - | HiPerFET | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Littelfuse |
IXTQ18N60P | MOSFET 18.0 Amps 600 V 0.42 Ohm Rds | |
| IXTQ180N10T | MOSFET N-CH 100V 180A TO-3P | ||
| IXTQ18N60P | MOSFET 18.0 Amps 600 V 0.42 Ohm Rds | ||
| IXTQ180N33TC | 신규 및 오리지널 | ||
| IXTQ182N055T | MOSFET N-CH 55V 182A TO-3P |