IXTQ130N stock, IXTQ130N, IXTQ130N20T


PartNumber	IXTQ130N20T	IXTQ130N10T	IXTQ130N10
Description	Discrete Semiconductor Modules DiscMSFT NChTrenchGate-Gen1 TO-3P (3)	MOSFET 130 Amps 100V 8.5 Rds
Manufacturer	IXYS	IXYS	IXYS
Product Category	Discrete Semiconductor Modules	MOSFET	FETs - Single
RoHS	Y	Y	-
Product	Power MOSFET Modules	-	-
Type	Trench	-	-
Vgs Gate Source Voltage	20 V	-	-
Mounting Style	Through Hole	Through Hole	Through Hole
Package / Case	TO-3P	TO-3P-3	-
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 175 C	+ 175 C	+ 175 C
Packaging	Tube	Tube	Tube
Configuration	Single	Single	Single
Brand	IXYS	IXYS	-
Transistor Polarity	N-Channel	N-Channel	N-Channel
Fall Time	22 ns	28 ns	28 ns
Id Continuous Drain Current	130 A	130 A	-
Pd Power Dissipation	830 W	360 W	-
Product Type	Discrete Semiconductor Modules	MOSFET	-
Rds On Drain Source Resistance	16 mOhms	8.5 mOhms	-
Rise Time	18 ns	47 ns	47 ns
Factory Pack Quantity	50	30	-
Subcategory	Discrete Semiconductor Modules	MOSFETs	-
Tradename	Trench	HiPerFET	-
Typical Turn Off Delay Time	57 ns	44 ns	44 ns
Typical Turn On Delay Time	25 ns	30 ns	30 ns
Vds Drain Source Breakdown Voltage	200 V	100 V	-
Vgs th Gate Source Threshold Voltage	2.5 V	-	-
Technology	-	Si	Si
Number of Channels	-	1 Channel	1 Channel
Channel Mode	-	Enhancement	Enhancement
Height	-	20.3 mm	-
Length	-	15.8 mm	-
Series	-	IXTQ130N10	IXTQ130N10
Transistor Type	-	1 N-Channel	1 N-Channel
Width	-	4.9 mm	-
Unit Weight	-	0.194007 oz	0.194007 oz
Package Case	-	-	TO-3P-3
Pd Power Dissipation	-	-	360 W
Id Continuous Drain Current	-	-	130 A
Vds Drain Source Breakdown Voltage	-	-	100 V
Rds On Drain Source Resistance	-	-	8.5 mOhms

Search Part Number : "IXTQ130N", Match & Start with "IXTQ130N" - Total : 5

제조사	부분 #	설명
Littelfuse	IXTQ130N20T	Discrete Semiconductor Modules DiscMSFT NChTrenchGate-Gen1 TO-3P (3)
	IXTQ130N10T	MOSFET 130 Amps 100V 8.5 Rds
	IXTQ130N10T	MOSFET 130 Amps 100V 8.5 Rds
	IXTQ130N10	신규 및 오리지널
	IXTQ130N15T	MOSFET N-CH 150V 130A TO-3P

IXTQ130N