IXTQ36

IXTQ36N50P vs IXTQ36N30P vs IXTQ36N20T

 
PartNumberIXTQ36N50PIXTQ36N30PIXTQ36N20T
DescriptionMOSFET 36.0 Amps 500 V 0.17 Ohm RdsMOSFET 36 Amps 300V 0.11 RdsMOSFET 36 Amps 200V 60 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-3P-3TO-3P-3TO-3P-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage500 V300 V200 V
Id Continuous Drain Current36 A36 A36 A
Rds On Drain Source Resistance170 mOhms110 mOhms60 Ohms
Vgs th Gate Source Threshold Voltage5 V--
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge85 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation540 W300 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancement-
TradenamePolarHV--
PackagingTubeTubeTube
Height20.3 mm20.3 mm-
Length15.8 mm15.8 mm-
SeriesIXTQ36N50IXTQ36N30IXTQ36N20
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypePolarHV Power MOSFET--
Width4.9 mm4.9 mm-
BrandIXYSIXYSIXYS
Forward Transconductance Min23 S--
Fall Time21 ns28 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time27 ns30 ns-
Factory Pack Quantity303030
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time75 ns97 ns-
Typical Turn On Delay Time25 ns24 ns-
Unit Weight0.194007 oz0.194007 oz0.194007 oz
제조사 부분 # 설명 RFQ
Littelfuse
Littelfuse
IXTQ36N50P MOSFET 36.0 Amps 500 V 0.17 Ohm Rds
IXTQ36P15P MOSFET -36.0 Amps -150V 0.110 Rds
IXTQ36N30P MOSFET 36 Amps 300V 0.11 Rds
IXTQ36N20T MOSFET 36 Amps 200V 60 Rds
IXTQ36N50 신규 및 오리지널
IXTQ36N50P TO247 신규 및 오리지널
IXTQ36N50P Darlington Transistors MOSFET 36.0 Amps 500 V 0.17 Ohm Rds
IXTQ36N30P Darlington Transistors MOSFET 36 Amps 300V 0.11 Rds
IXTQ36P15P MOSFET -36.0 Amps -150V 0.110 Rds
IXTQ36N20T MOSFET 36 Amps 200V 60 Rds
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