| PartNumber | IXTY32P05T-TRL | IXTY32P05T | IXTY3N50P |
| Description | Discrete Semiconductor Modules TrenchP Power MOSFET | MOSFET TrenchP Power MOSFET | MOSFET 3.6 Amps 500 V 2 Ohm Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | Discrete Semiconductor Modules | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Product | Power MOSFET Modules | - | - |
| Type | TrenchP | - | - |
| Vgs Gate Source Voltage | 15 V | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Packaging | Reel | Tube | Tube |
| Configuration | Single | - | Single |
| Brand | IXYS | IXYS | - |
| Transistor Polarity | P-Channel | P-Channel | N-Channel |
| Fall Time | 27 ns | - | 12 ns |
| Id Continuous Drain Current | - 32 A | 32 A | - |
| Pd Power Dissipation | 83 W | - | - |
| Product Type | Discrete Semiconductor Modules | MOSFET | - |
| Rds On Drain Source Resistance | 39 mOhms | 39 mOhms | - |
| Rise Time | 28 ns | - | 15 ns |
| Factory Pack Quantity | 2500 | 70 | - |
| Subcategory | Discrete Semiconductor Modules | MOSFETs | - |
| Tradename | TrenchP | - | PolarHV |
| Typical Turn Off Delay Time | 39 ns | - | 38 ns |
| Typical Turn On Delay Time | 20 ns | - | 15 ns |
| Vds Drain Source Breakdown Voltage | - 50 V | 50 V | - |
| Vgs th Gate Source Threshold Voltage | - 4.5 V | - | - |
| Technology | - | Si | Si |
| Series | - | IXTY32P05 | IXTY3N50 |
| Unit Weight | - | 0.081130 oz | 0.012346 oz |
| Package Case | - | - | TO-252-3 |
| Number of Channels | - | - | 1 Channel |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 70 W |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 3.6 A |
| Vds Drain Source Breakdown Voltage | - | - | 500 V |
| Vgs th Gate Source Threshold Voltage | - | - | 5.5 V |
| Rds On Drain Source Resistance | - | - | 2 Ohms |
| Qg Gate Charge | - | - | 9.3 nC |
| Forward Transconductance Min | - | - | 2.5 S |
| Channel Mode | - | - | Enhancement |