| PartNumber | IXXH75N60B3D1 | IXXH75N60C3 | IXXH75N60B3 |
| Description | IGBT Transistors XPT 600V IGBT GenX3 XPT IGBTs | IGBT Transistors XPT 600V IGBT GenX3 Power Device | IGBT Transistors DISC IGBT XPT-GENX3 |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Series | IXXH75N60 | IXXH75N60 | - |
| Packaging | Tube | Tube | - |
| Brand | IXYS | IXYS | IXYS |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Tradename | XPT | XPT | - |
| Package / Case | - | TO-247-3 | TO-247-3 |
| Mounting Style | - | Through Hole | Through Hole |
| Height | - | 21.45 mm | - |
| Length | - | 16.24 mm | - |
| Width | - | 5.3 mm | - |
| Unit Weight | - | 1.340411 oz | - |
| Configuration | - | - | Single |
| Collector Emitter Voltage VCEO Max | - | - | 600 V |
| Collector Emitter Saturation Voltage | - | - | 1.6 V |
| Maximum Gate Emitter Voltage | - | - | 20 V |
| Continuous Collector Current at 25 C | - | - | 160 A |
| Pd Power Dissipation | - | - | 750 W |
| Minimum Operating Temperature | - | - | - 55 C |
| Maximum Operating Temperature | - | - | + 175 C |
| Continuous Collector Current Ic Max | - | - | 300 A |
| Gate Emitter Leakage Current | - | - | 100 nA |