| PartNumber | IXYH8N250CHV | IXYH80N90C3 | IXYH82N120C3 |
| Description | Discrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-247AD | IGBT Transistors DISC IGBT XPT-GENX3 | IGBT Transistors XPT IGBT C3-Class 1200V/160A |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | Discrete Semiconductor Modules | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Product | Power Semiconductor Modules | - | - |
| Type | High Voltage | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247HV-3 | TO-247AD-3 | TO-247AD-3 |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 150 C |
| Packaging | Tube | - | Tube |
| Configuration | Single | - | Single |
| Brand | IXYS | IXYS | IXYS |
| Transistor Polarity | N-Channel | - | - |
| Fall Time | 86 ns | - | - |
| Id Continuous Drain Current | 29 A | - | - |
| Pd Power Dissipation | 280 W | - | 1040 W |
| Product Type | Discrete Semiconductor Modules | IGBT Transistors | IGBT Transistors |
| Rise Time | 5 ns | - | - |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | Discrete Semiconductor Modules | IGBTs | IGBTs |
| Tradename | XPT | - | XPT |
| Typical Turn Off Delay Time | 180 ns | - | - |
| Typical Turn On Delay Time | 11 ns | - | - |
| Vds Drain Source Breakdown Voltage | 2500 V | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Technology | - | Si | Si |
| Series | - | Planar | IXYH82N120 |
| Unit Weight | - | 0.225753 oz | 1.340411 oz |
| Collector Emitter Voltage VCEO Max | - | - | 1200 V |
| Collector Emitter Saturation Voltage | - | - | 2.75 V |
| Maximum Gate Emitter Voltage | - | - | 30 V |
| Continuous Collector Current at 25 C | - | - | 160 A |
| Continuous Collector Current Ic Max | - | - | 160 A |
| Gate Emitter Leakage Current | - | - | 100 nA |