IXYQ stock, IXYQ, IXYQ30N65B3D1

IXYQ30N65B3D1 vs IXYQ40N65B3D1 vs IXYQ40N65C3D1


PartNumber	IXYQ30N65B3D1	IXYQ40N65B3D1	IXYQ40N65C3D1
Description	IGBT Transistors DISC IGBT XPT-GENX3	IGBT Transistors DISC IGBT XPT-GENX3	IGBT Transistors
Manufacturer	IXYS	IXYS	IXYS
Product Category	IGBT Transistors	IGBT Transistors	IGBT Transistors
Technology	Si	Si	Si
Package / Case	TO-3P-3	TO-3P-3	-
Mounting Style	Through Hole	Through Hole	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	650 V	650 V	-
Collector Emitter Saturation Voltage	1.8 V	1.7 V	-
Maximum Gate Emitter Voltage	20 V	20 V	-
Continuous Collector Current at 25 C	70 A	86 A	-
Pd Power Dissipation	270 W	300 W	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 175 C	+ 175 C	-
Continuous Collector Current Ic Max	160 A	195 A	-
Brand	IXYS	IXYS	IXYS
Gate Emitter Leakage Current	100 nA	100 nA	-
Product Type	IGBT Transistors	IGBT Transistors	IGBT Transistors
Factory Pack Quantity	30	30	30
Subcategory	IGBTs	IGBTs	IGBTs
RoHS	-	-	Y
Packaging	-	-	Tube
Tradename	-	-	XPT, GenX3

Search Part Number : "IXYQ", Match & Start with "IXYQ" - Total : 4

제조사	부분 #	설명
Littelfuse	IXYQ30N65B3D1	IGBT Transistors DISC IGBT XPT-GENX3
	IXYQ40N65B3D1	IGBT Transistors DISC IGBT XPT-GENX3
	IXYQ40N65C3D1	IGBT Transistors
	IXYQ40N65C3D1	IGBT Transistors