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| PartNumber | JAN2N2857UB | JAN2N2857UB/TR | JAN2N2857 |
| Description | Bipolar Transistors - BJT Small-Signal BJT | RF Bipolar Transistors | Bipolar Transistors - BJT Small-Signal BJT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | RF Bipolar Transistors | Bipolar Transistors - BJT |
| RoHS | N | N | N |
| Packaging | Waffle | Reel | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Product Type | BJTs - Bipolar Transistors | RF Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 100 | 100 |
| Subcategory | Transistors | Transistors | Transistors |
| Transistor Type | - | Bipolar | - |
| Technology | - | Si | - |
| Transistor Polarity | - | NPN | - |
| DC Collector/Base Gain hfe Min | - | 30 | - |
| Collector Emitter Voltage VCEO Max | - | 15 V | - |
| Emitter Base Voltage VEBO | - | 3 V | - |
| Continuous Collector Current | - | 40 mA | - |
| Minimum Operating Temperature | - | - 65 C | - |
| Maximum Operating Temperature | - | + 200 C | - |
| Configuration | - | Single | - |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | UB-3 | - |
| Maximum DC Collector Current | - | 40 mA | - |
| Pd Power Dissipation | - | 200 mW | - |