 | |  | |
| PartNumber | JANTX2N3439U4 | JANTX2N3439L | JANTX2N3439 |
| Description | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT Power BJT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| Packaging | Tray | Foil Bag | Bulk |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Subcategory | Transistors | Transistors | Transistors |
| RoHS | - | N | N |
| Factory Pack Quantity | - | 1 | 1 |
| Technology | - | - | Si |
| Mounting Style | - | - | Through Hole |
| Package / Case | - | - | TO-39-3 |
| Transistor Polarity | - | - | NPN |
| Configuration | - | - | Single |
| Collector Emitter Voltage VCEO Max | - | - | 350 V |
| Collector Base Voltage VCBO | - | - | 450 V |
| Emitter Base Voltage VEBO | - | - | 7 V |
| Collector Emitter Saturation Voltage | - | - | 500 mV |
| Maximum DC Collector Current | - | - | 1 A |
| Minimum Operating Temperature | - | - | - 65 C |
| Maximum Operating Temperature | - | - | + 200 C |
| DC Current Gain hFE Max | - | - | 160 at 20 mA, 10 V |
| DC Collector/Base Gain hfe Min | - | - | 40 at 20 mA, 10 V |
| Pd Power Dissipation | - | - | 800 mW |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Microchip / Microsemi |
JANTX2N3439U4 | Bipolar Transistors - BJT Power BJT | |
| JANTX2N3439L | Bipolar Transistors - BJT Power BJT | ||
| JANTX2N3439 | Bipolar Transistors - BJT Power BJT | ||
| JANTX2N3439 | Trans GP BJT NPN 350V 1A 3-Pin TO-39 | ||
| JANTX2N3439L | TRANS NPN 350V 1A | ||
| JANTX2N3439UA | - Bulk (Alt: JANTX2N3439UA) | ||
| JANTX2N3439U4 | TRANS NPN 350V 1A UA |