 | |  | |
| PartNumber | Jan2N6989/TR | Jan2N6989 | Jan2N6989U |
| Description | Bipolar Transistors - BJT | MOSFET BJTs | MOSFET Small-Signal BJT |
| Manufacturer | Microchip | Microchip | - |
| Product Category | Bipolar Transistors - BJT | MOSFET | - |
| RoHS | N | N | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-116-14 | TO-116-14 | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Quad | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Collector Base Voltage VCBO | 75 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 0.3 V | - | - |
| Maximum DC Collector Current | 800 mA | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 200 C | - | - |
| DC Current Gain hFE Max | 325 at 1 mA, 10 V | - | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | - |
| DC Collector/Base Gain hfe Min | 30 at 500 mA, 10 V | - | - |
| Pd Power Dissipation | 1.5 W | - | - |
| Product Type | BJTs - Bipolar Transistors | MOSFET | - |
| Factory Pack Quantity | 1 | 1 | - |
| Subcategory | Transistors | MOSFETs | - |
| Packaging | - | Tube | - |
| Unit Weight | - | 0.014110 oz | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Microchip / Microsemi |
Jan2N6989/TR | Bipolar Transistors - BJT | |
| Jan2N6989 | MOSFET BJTs | ||
| Jan2N6989U | MOSFET Small-Signal BJT | ||
| Jan2N6989U/TR | Bipolar Transistors - BJT |