 |  | | |
| PartNumber | JANTX2N5664 | Jantx2N5666 | JANTX2N5665 |
| Description | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT Power BJT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | N | N | N |
| Packaging | Tray | Bulk | Tray |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | Transistors | Transistors | Transistors |
| Technology | - | Si | - |
| Mounting Style | - | Through Hole | - |
| Package / Case | - | TO-5-3 | - |
| Transistor Polarity | - | NPN | - |
| Configuration | - | Single | - |
| Collector Emitter Voltage VCEO Max | - | 200 V | - |
| Collector Base Voltage VCBO | - | 250 V | - |
| Emitter Base Voltage VEBO | - | 6 V | - |
| Collector Emitter Saturation Voltage | - | 400 mV | - |
| Maximum DC Collector Current | - | 5 A | - |
| Minimum Operating Temperature | - | - 65 C | - |
| Maximum Operating Temperature | - | + 200 C | - |
| DC Current Gain hFE Max | - | 75 at 1 A, 5 VDC | - |
| DC Collector/Base Gain hfe Min | - | 25 at 1 A, 5 VDC | - |
| Pd Power Dissipation | - | 1.2 W | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Microchip / Microsemi |
Jantx2N5667 | Bipolar Transistors - BJT Power BJT | |
| JANTX2N5664 | Bipolar Transistors - BJT Power BJT | ||
| Jantx2N5666 | Bipolar Transistors - BJT Power BJT | ||
| JANTX2N5665 | Bipolar Transistors - BJT Power BJT | ||
| JANTX2N5665 | Trans GP BJT NPN 300V 5A 3-Pin(2+Tab) TO-66 | ||
| JANTX2N5666 | PNP TRANSISTOR | ||
| JANTX2N5664 | TRANS NPN 200V 5A TO66 | ||
| JANTX2N5667 | Trans GP BJT NPN 300V 5A 3-Pin TO-5 |