KSC3503DST stock, KSC3503DST, KSC3503DSTU


PartNumber	KSC3503DSTU	KSC3503DSTSSTU	KSC3503DSTSTU
Description	Bipolar Transistors - BJT NPN Si Transistor Epitaxial	Bipolar Transistors - BJT NPN Epitaxial Sil	TRANS NPN 300V 0.1A TO-126
Manufacturer	ON Semiconductor	ON Semiconductor	-
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	-
RoHS	Y	Y	-
Mounting Style	Through Hole	Through Hole	-
Package / Case	TO-126-3	TO-126-3	-
Transistor Polarity	NPN	NPN	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	300 V	300 V	-
Collector Base Voltage VCBO	300 V	300 V	-
Emitter Base Voltage VEBO	5 V	5 V	-
Collector Emitter Saturation Voltage	0.6 V	0.6 V	-
Maximum DC Collector Current	0.1 A	0.1 A	-
Gain Bandwidth Product fT	150 MHz	150 MHz	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	KSC3503	-	-
DC Current Gain hFE Max	320	320	-
Height	11 mm	11 mm	-
Length	8 mm	8 mm	-
Packaging	Tube	Tube	-
Width	3.25 mm	3.25 mm	-
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild	-
Continuous Collector Current	0.1 A	0.1 A	-
DC Collector/Base Gain hfe Min	40	40	-
Pd Power Dissipation	7 W	7 W	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	1920	60	-
Subcategory	Transistors	Transistors	-
Part # Aliases	KSC3503DSTU_NL	-	-
Unit Weight	0.026843 oz	0.026843 oz	-

Search Part Number : "KSC3503DST", Match & Start with "KSC3503DST" - Total : 5

제조사	부분 #	설명
ON Semiconductor / Fairchild	KSC3503DSTU	Bipolar Transistors - BJT NPN Si Transistor Epitaxial
ON Semiconductor / Fairchild	KSC3503DSTSSTU	Bipolar Transistors - BJT NPN Epitaxial Sil
ON Semiconductor	KSC3503DSTU	TRANS NPN 300V 0.1A TO-126
	KSC3503DSTSSTU	TRANS NPN 300V 0.1A TO-126
	KSC3503DSTSTU	TRANS NPN 300V 0.1A TO-126

KSC3503DST