 |  | | |
| PartNumber | KSD363YTU | KSD363YTA | KSD363YTU KSD363-Y |
| Description | Bipolar Transistors - BJT NPN Epitaxial Sil | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 120 V | - | - |
| Collector Base Voltage VCBO | 300 V | - | - |
| Emitter Base Voltage VEBO | 8 V | - | - |
| Maximum DC Collector Current | 6 A | - | - |
| Gain Bandwidth Product fT | 10 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | KSD363 | - | - |
| Height | 9.4 mm | - | - |
| Length | 10.1 mm | - | - |
| Packaging | Tube | - | - |
| Width | 4.7 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| DC Collector/Base Gain hfe Min | 120 | - | - |
| Pd Power Dissipation | 40000 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | KSD363YTU_NL | - | - |
| Unit Weight | 0.063493 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
KSD363YTU | Bipolar Transistors - BJT NPN Epitaxial Sil | |
ON Semiconductor |
KSD363YTU | Bipolar Transistors - BJT NPN Epitaxial Sil | |
| KSD363YTA | 신규 및 오리지널 | ||
| KSD363YTU KSD363-Y | 신규 및 오리지널 |